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The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistorsE.J. Prinz, James C. Sturm, P.M. Garone et al.|IEEE Electron Device Letters|1991Cited by 115
Hole mobility enhancement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructure inversion layersP.M. Garone, James C. Sturm, V. Venkataraman|IEEE Electron Device Letters|1992Cited by 104
Silicon temperature measurement by infrared transmission for rapid thermal processing applicationsJames C. Sturm, P.M. Garone, Peter Schwartz|Applied Physics Letters|1990Cited by 39
The effect of base-emitter spacers and strain dependent densities of states in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistorsE.J. Prinz, James C. Sturm, P.M. Garone et al.|Unknown|2003Cited by 28