Growth of Si1−<i>x</i>Ge<i>x</i> by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors
James C. Sturm(Princeton University), Hari C. Manoharan(SLAC National Accelerator Laboratory), Peter Schwartz(Princeton University), E.J. Prinz(Princeton University)
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
July 1, 1991
Cited by 95
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