The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors
E.J. Prinz(Princeton University), James C. Sturm(Princeton University), P.M. Garone(Princeton University), Peter Schwartz(Princeton University), X. Xiao(Princeton University)
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