Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1− <i>x</i> − <i>y</i> Ge <i>x</i> C <i>y</i> alloy layers on Si (100)A. St. Amour, M. L. W. Thewalt, C. W. Liu et al.|Applied Physics Letters|1995Cited by 104
Growth and photoluminescence of high quality SiGeC random alloys on silicon substratesC. W. Liu, D. J. Eaglesham, C. W. Magee et al.|Journal of Applied Physics|1996Cited by 32
Growth and band gap of strained 〈110〉 Si1−<i>x</i>Ge<i>x</i> layers on silicon substrates by chemical vapor depositionC. W. Liu, D. D. Perovic, James C. Sturm et al.|Applied Physics Letters|1994Cited by 29
Deep photoluminescence in Si/Si1−<i>x</i>Ge<i>x</i>/Si quantum wells created by ion implantation and annealingJames C. Sturm, M. L. W. Thewalt, A. St. Amour et al.|Applied Physics Letters|1994Cited by 23
Enhancement of high-temperature photoluminescence in strained Si1−<i>x</i>Ge<i>x</i>/Si heterostructures by surface passivationA. St. Amour, M. L. W. Thewalt, James C. Sturm et al.|Applied Physics Letters|1994Cited by 21