Growth and band gap of strained 〈110〉 Si1−<i>x</i>Ge<i>x</i> layers on silicon substrates by chemical vapor deposition

C. W. Liu(Taichung Veterans General Hospital), D. D. Perovic(University of Toronto), Y. Lacroix(Simon Fraser University), James C. Sturm(Princeton University), M. L. W. Thewalt(Simon Fraser University)
Applied Physics Letters
July 4, 1994
10.1063/1.113079
Cited by 29

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