A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier<sup/>Qiqiao Wu, Ming Liu, Yue Cao et al.|IEEE Journal of Solid-State Circuits|2023Cited by 28
A 9Mb HZO-Based Embedded FeRAM with 10<sup>12</sup>-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense AmplifierYang Jianguo, Ming Liu, Qing Luo et al.|Unknown|2023Cited by 26
A 1.2GHz 12.77GB/s/mm <sup>2</sup> 3D Two-DRAM-One-Logic Process-Near-Memory Chip for Edge LLM ApplicationsY. Charles Cao, Ming Liu, Jinghao Jiang et al.|Unknown|2026Cited by 2
A 12nm 4Mb 104.56-to-137.75TFLOPS/W Charge-Trap Transistor-Based Computing-in-Memory Macro Using Analog-Predict-Digital-Compute for AI Edge DevicesJunzhe Shen, Ming Liu, Z. Li et al.|Unknown|2026Cited by 2
A hybrid-tiling attention accelerator with a fully-pipelined balanced systolic array in 3D hybrid-bonding near-DRAM integrationZhongze Han, Chunmeng Dou, Hanghang Gao et al.|Microelectronics Journal|2026Cited by 1