A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier<sup/>

Qiqiao Wu(Chinese Academy of Sciences), Ming Liu(China Academy of Space Technology), Jianguo Yang(Chinese Academy of Sciences), Yongkang Han(Zhejiang Lab), Chunmeng Dou(Chinese Academy of Sciences), Qing Luo(University of Chinese Academy of Sciences), Qi Liu(State Key Laboratory of Low-Dimensional Quantum Physics), Haijun Jiang(Shanghai Zhangjiang Laboratory), Yue Cao(Fudan University), Hangbing Lv(University of Chinese Academy of Sciences), Zhongze Han(Chinese Academy of Sciences)
IEEE Journal of Solid-State Circuits
October 11, 2023
10.1109/jssc.2023.3320659
Cited by 28

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