A 9Mb HZO-Based Embedded FeRAM with 10<sup>12</sup>-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier
Yang Jianguo(Chinese Academy of Sciences), Ming Liu(Chinese Academy of Sciences), Xiaoyong Xue(Beijing University of Chinese Medicine), Qi-Qiao Wu(Fudan University), Yongkang Han(Zhejiang Lab), Chunmeng Dou(Chinese Academy of Sciences), Qi Liu(State Key Laboratory of Low-Dimensional Quantum Physics), Haijun Jiang(Shanghai Zhangjiang Laboratory), Hangbing Lv(University of Chinese Academy of Sciences), Yue Cao(Fudan University), Qing Luo(Nanchang University), Zhongze Han(Chinese Academy of Sciences)
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