A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier<sup/>Qiqiao Wu, Ming Liu, Zhongze Han et al.|IEEE Journal of Solid-State Circuits|2023Cited by 28
A 9Mb HZO-Based Embedded FeRAM with 10<sup>12</sup>-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense AmplifierYang Jianguo, Ming Liu, Qing Luo et al.|Unknown|2023Cited by 26