Resistive Switching Behaviors of ReRAM Having W/CeO<sub>2</sub>/Si/TiN Structures
Chunmeng Dou(Chinese Academy of Sciences), Hiroshi Iwai(Kyoto University), Nobuyuki Sugii(Tokyo Institute of Technology), Akira Nishiyama(Kagawa University), Koki Mukai(Tokyo Institute of Technology), Kazuo Tsutsui(Tokyo Institute of Technology), Takeo Hattori(Tokyo Institute of Technology), Kuniyuki Kakushima(Tokyo Institute of Technology), Parhat Ahmet(National Institute for Materials Science), Kenji Natori(Chiba University)
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