Tensely strained silicon on SiGe produced by strain transferDan Buca, H.‐E. Schaefer, B. Holländer et al.|Applied Physics Letters|2004Cited by 37
Investigation of plasma hydrogenation and trapping mechanism for layer transferPeng Chen, S. S. Lau, M. Nastasi et al.|Applied Physics Letters|2005Cited by 27
Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layersDan Buca, Matty Caymax, B. Holländer et al.|Applied Physics Letters|2007Cited by 25
Growth of strained Si on He ion implanted Si/SiGe heterostructuresDan Buca, H.‐E. Schaefer, S. Feste et al.|Solid-State Electronics|2005Cited by 23
Formation of ternary Ni-silicide on relaxed and strained SiGe layersQing‐Tai Zhao, S. Mantl, Dan Buca et al.|Microelectronic Engineering|2004Cited by 19