Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films
Riikka L. Puurunen(Aalto University), Marc Heyns(IMEC), Annelies Delabie(IMEC), David Hellin, I. Hoflijk(IMEC), Thierry Conard(IMEC), Martin L. Green(National Institute of Standards and Technology), Wilfried Vandervorst(Imec the Netherlands), Matty Caymax(IMEC), Danielle Vanhaeren(IMEC), Bert Brijs(IMEC), Stefan De Gendt(Imec the Netherlands), H. Bender(IMEC), Sven Van Elshocht(Columbia University), Chao Zhao(Chinese Academy of Sciences), Olivier Richard(IMEC)
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