Material and Device Characteristics of Metamorphic <formula formulatype="inline"> <tex Notation="TeX">${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$</tex></formula> MOSHEMTs Grown on GaAs and Si Substrates by MOCVDQiang Li, Kei May Lau, Chak Wah Tang et al.|IEEE Transactions on Electron Devices|2013Cited by 32
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30-nm Inverted $\hbox{In}_{0.53}\hbox{Ga}_{0.47} \hbox{As}$ MOSHEMTs on Si Substrate Grown by MOCVD With Regrown Source/DrainXiuju Zhou, Kei May Lau, Qiang Li et al.|IEEE Electron Device Letters|2012Cited by 27
Inverted-Type InGaAs Metal–Oxide–Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2 A/mmXiuju Zhou, Kei May Lau, Qiang Li et al.|Applied Physics Express|2012Cited by 22
30nm enhancement-mode In<inf>0.53</inf>Ga<inf>0.47</inf>As MOSFETs on Si substrates grown by MOCVD exhibiting high transconductance and low on-resistanceXiuju Zhou, Kei May Lau, Chak Wah Tang et al.|Unknown|2012Cited by 13