30nm enhancement-mode In<inf>0.53</inf>Ga<inf>0.47</inf>As MOSFETs on Si substrates grown by MOCVD exhibiting high transconductance and low on-resistance
Xiuju Zhou(Hong Kong University of Science and Technology), Kei May Lau(Hong Kong University of Science and Technology), Chak Wah Tang(Hong Kong University of Science and Technology), Qiang Li(Harvard University)
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