High-Performance Inverted $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD
Qiang Li(Harvard University), Kei May Lau(Hong Kong University of Science and Technology), Xiuju Zhou(Hong Kong University of Science and Technology), Chak Wah Tang(Hong Kong University of Science and Technology)
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