Material and Device Characteristics of Metamorphic <formula formulatype="inline"> <tex Notation="TeX">${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$</tex></formula> MOSHEMTs Grown on GaAs and Si Substrates by MOCVD

Qiang Li(Harvard University), Kei May Lau(Hong Kong University of Science and Technology), Xiuju Zhou(Hong Kong University of Science and Technology), Chak Wah Tang(Hong Kong University of Science and Technology)
IEEE Transactions on Electron Devices
October 11, 2013
10.1109/ted.2013.2283721
Cited by 32

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