30-nm Inverted $\hbox{In}_{0.53}\hbox{Ga}_{0.47} \hbox{As}$ MOSHEMTs on Si Substrate Grown by MOCVD With Regrown Source/Drain
Xiuju Zhou(Hong Kong University of Science and Technology), Kei May Lau(Hong Kong University of Science and Technology), Chak Wah Tang(Hong Kong University of Science and Technology), Qiang Li(Harvard University)
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