Inverted-Type InGaAs Metal–Oxide–Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2 A/mm
Xiuju Zhou(Hong Kong University of Science and Technology), Kei May Lau(Hong Kong University of Science and Technology), Chak Wah Tang(Hong Kong University of Science and Technology), Qiang Li(Harvard University)
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