Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystalsJ. Wong‐Leung, B. G. Svensson, Martin S. Janson|Journal of Applied Physics|2003Cited by 52
Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial materialM. K. Linnarsson, Eva Olsson, Martin S. Janson et al.|Applied Physics Letters|2001Cited by 47
Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiCJ. Slotte, C. Jagadish, Andrej Kuznetsov et al.|Journal of Applied Physics|2005Cited by 34
Solubility limits of dopants in 4H–SiCM. K. Linnarsson, B. G. Svensson, U. Zimmermann et al.|Applied Surface Science|2002Cited by 24
Ion implantation in 4H–SiCJ. Wong‐Leung, D. J. H. Cockayne, Martin S. Janson et al.|Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms|2007Cited by 23