Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC
J. Slotte(Helsinki Institute of Physics), C. Jagadish(Australian National University), Martin S. Janson(KTH Royal Institute of Technology), K. Saarinen(Helsinki Institute of Physics), Anders Hallén(KTH Royal Institute of Technology), Andrej Kuznetsov(University of Oslo), B. G. Svensson(KTH Royal Institute of Technology), J. Wong‐Leung(Australian National University)
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