A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer LayerSholihul Hadi Mokhammad, HIROSHI IWAI, unknown unknown et al.|Institutional Repositories DataBase (IRDB)|2013Cited by 0
Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurementChun Meng Dou, H Iwai, Chunmeng Dou et al.|Institutional Repositories DataBase (IRDB)|2014Cited by 0
Influence electrode materials on CeOx based resistive switching真一 叶, HIROSHI IWAI, Shinichi Kano et al.|Institutional Repositories DataBase (IRDB)|2013Cited by 0
希土類(Ce,Eu)酸化物MIM構造の抵抗スイッチング特性Chunmeng Dou, HIROSHI IWAI, マイマイティレャアティ マイマイティ et al.|Institutional Repositories DataBase (IRDB)|2010Cited by 0
希土類酸化物(CeOX)を用いたMIM構造の抵抗スイッチング特性真一 叶, HIROSHI IWAI, Kazuo Tsutsui et al.|Institutional Repositories DataBase (IRDB)|2011Cited by 0