A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer LayerSholihul Hadi Mokhammad, HIROSHI IWAI, Chunmeng Dou et al.|Institutional Repositories DataBase (IRDB)|2013Cited by 0
Influence electrode materials on CeOx based resistive switching真一 叶, HIROSHI IWAI, Shinichi Kano et al.|Institutional Repositories DataBase (IRDB)|2013Cited by 0