Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si<sub>0.45</sub>Ge<sub>0.55</sub>, Ge Gate-All-Around NSFET for 5 nm Technology Node
Jiaxin Yao(Chinese Academy of Sciences), Zhenhua Wu(University of Chinese Academy of Sciences), Qingzhu Zhang(Hebei University of Technology), Jun Li(Xiamen University), Jie Gu(University of Chinese Academy of Sciences), Kun Luo(Chinese Academy of Sciences), Wen Yang(Beijing Computational Science Research Center), Zhaozhao Hou(University of Chinese Academy of Sciences), Jiahan Yu(Chinese Academy of Sciences), Huaxiang Yin(Chinese Academy of Sciences)
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