New insight into high-field mobility enhancement of nitrided-oxide N-MOSFET's based on noise measurement
Z.J. Ma(Integrated Device Technology (United States)), Chenming Hu(National Yang Ming Chiao Tung University), Z.H. Liu(Cytel (United States)), Yiu Chung Cheng(Hong Kong Polytechnic University), P.K. Ko(University of California, Berkeley)
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