S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor
Sonja Sioncke(IMEC), Matty Caymax(IMEC), Matthias Müller(University of Oxford), Jens Rip(IMEC), Guy Brammertz(IMEC), Herbert Struyf(IMEC), Thierry Conard(IMEC), Alexis Franquet(IMEC), Stefan De Gendt(Imec the Netherlands), Hang-Chun Lin(IMEC), Laura Nyns(IMEC), Burkhard Beckhoff(Physikalisch-Technische Bundesanstalt), Annelies Delabie(IMEC)
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