GeSn channel nMOSFETs: Material potential and technological outlook
Shubhanshu Gupta(Stanford University), Krishna C. Saraswat(Stanford University), J. Dekoster(IMEC), Bin Yang(Economic Research Institute), Federica Gencarelli(IMEC), Blanka Magyari-Köpe(Stanford University), Matty Caymax(IMEC), Alexis Franquet(IMEC), Andrea Firrincieli(IMEC), Yoshio Nishi(Stanford University), Benjamin Vincent(IMEC), Dennis Lin(IMEC), Bastien Douhard(IMEC), J. Delmotte(IMEC), Marika Gunji(Stanford University)
Cited by 31
Related Papers
Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
|Nano Letters|2014|338
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
|Applied Physics Letters|2007|271
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
|Journal of The Electrochemical Society|2008|267
High-k dielectrics for future generation memory devices (Invited Paper)
|Microelectronic Engineering|2009|252
High-specific-power flexible transition metal dichalcogenide solar cells
|Nature Communications|2021|207