On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime
L. Goux(IMEC), M. Jurczak(IMEC), A. Fantini(IMEC), R. Degraeve(IMEC), Nagarajan Raghavan(Singapore University of Technology and Design), Francesca De Stefano(Collaborative Group (United States)), Y. Y. Chen(IMEC), Gouri Sankar Kar(IMEC), Sebastiano Strangio(University of Pisa), V. V. Afanas’ev(IMEC), Robin Nigon(IMEC)
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