On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes

David S. Meyaard(Rensselaer Polytechnic Institute), Cheolsoo Sone(Samsung (South Korea)), Jaehee Cho(Rensselaer Polytechnic Institute), Qi Dai(Microsoft Research (United Kingdom)), E. Fred Schubert(Rensselaer Polytechnic Institute), Minho Kim(Rensselaer Polytechnic Institute), Qifeng Shan(Rensselaer Polytechnic Institute)
Applied Physics Letters
July 25, 2011
10.1063/1.3618673
Cited by 78

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