Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
Qi Dai(Microsoft Research (United Kingdom)), Yongjo Park(Samsung (South Korea)), Sameer Chhajed(Rensselaer Polytechnic Institute), Qifeng Shan(Rensselaer Polytechnic Institute), Daniel Koleske(Sandia National Laboratories), Jing Wang(Suzhou Institute of Nano-tech and Nano-bionics), Minho Kim(Rensselaer Polytechnic Institute), Jaehee Cho(Rensselaer Polytechnic Institute), E. Fred Schubert(Rensselaer Polytechnic Institute), Mary H. Crawford(Sandia National Laboratories)
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