Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
Qi Dai(Microsoft Research (United Kingdom)), Yongjo Park(Samsung (South Korea)), Sameer Chhajed(Rensselaer Polytechnic Institute), Qifeng Shan(Rensselaer Polytechnic Institute), Daniel Koleske(Sandia National Laboratories), Jing Wang(Rensselaer Polytechnic Institute), Minho Kim(Rensselaer Polytechnic Institute), Jaehee Cho(Rensselaer Polytechnic Institute), E. Fred Schubert(Rensselaer Polytechnic Institute), Mary H. Crawford(Sandia National Laboratories)
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