Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
Qi Dai(Microsoft Research (United Kingdom)), Michael A. Banas(Sandia National Laboratories), Mary H. Crawford(Sandia National Laboratories), A. J. Fischer(Sandia National Laboratories), S. R. Lee(Sandia National Laboratories), M. H. Kim(Rensselaer Polytechnic Institute), Daniel Koleske(Sandia National Laboratories), G. T. Thaler(University of Florida), M. Schubert(Rensselaer Polytechnic Institute), E. Fred Schubert(Rensselaer Polytechnic Institute), J. K. Kim(Rensselaer Polytechnic Institute)
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