On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms
Qi Dai(Microsoft Research (United Kingdom)), Yongjo Park(Samsung (South Korea)), Qifeng Shan(Rensselaer Polytechnic Institute), Daniel Koleske(Sandia National Laboratories), Minho Kim(Rensselaer Polytechnic Institute), Jaehee Cho(Rensselaer Polytechnic Institute), E. Fred Schubert(Rensselaer Polytechnic Institute), Mary H. Crawford(Sandia National Laboratories)
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