Origin of efficiency droop in GaN-based light-emitting diodes
Minho Kim(Rensselaer Polytechnic Institute), Yongjo Park(Samsung (South Korea)), Joachim Piprek(University of Delaware), M. Schubert(Rensselaer Polytechnic Institute), Jong Kyu Kim(Rensselaer Polytechnic Institute), Qi Dai(Microsoft Research (United Kingdom)), E. Fred Schubert(Rensselaer Polytechnic Institute)
Cited by 1,296
Related Papers
Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
|Applied Physics Letters|2009|276
Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
|Applied Physics Letters|2010|222
Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes
|Applied Physics Letters|2011|144
Self-activated ultrahigh chemosensitivity of oxide thin film nanostructures for transparent sensors
|Scientific Reports|2012|123