Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes
Qifeng Shan(Rensselaer Polytechnic Institute), Cheolsoo Sone(Samsung (South Korea)), Jaehee Cho(Rensselaer Polytechnic Institute), E. Fred Schubert(Rensselaer Polytechnic Institute), Joong Kon Son(Samsung (South Korea)), Qi Dai(Microsoft Research (United Kingdom)), David S. Meyaard(Rensselaer Polytechnic Institute)
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