Atomic layer deposition of Al2O3 on S-passivated Ge
Sonja Sioncke(IMEC), Matty Caymax(IMEC), Matthias Müller(University of Oxford), Herbert Struyf(IMEC), Stefan De Gendt(Imec the Netherlands), J. Ceuppens(IMEC), Dennis Lin(IMEC), Laura Nyns(IMEC), Burkhard Beckhoff(Physikalisch-Technische Bundesanstalt), Annelies Delabie(IMEC)
Cited by 19
Related Papers
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
|Materials Science and Engineering R Reports|2006|278
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
|Applied Physics Letters|2007|271
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
|Journal of The Electrochemical Society|2008|267
High-k dielectrics for future generation memory devices (Invited Paper)
|Microelectronic Engineering|2009|252
Undoped and <i>in-situ</i> B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
|Applied Physics Letters|2011|189