Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices
Shaoren Deng(Ghent University), Christophe Detavernier(Ghent University Hospital), Marc Schaekers(IMEC), S. Van den Berghe(Belgian Nuclear Research Centre), Qi Xie(ASM International (Belgium)), Matty Caymax(IMEC), Dennis Lin(IMEC), Annelies Delabie(IMEC), Davy Deduytsche(Ghent University), Xin-Ping Qu(Fudan University)
Cited by 31
Related Papers
Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
|Nano Letters|2014|338
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
|Applied Physics Letters|2007|271
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
|Journal of The Electrochemical Society|2008|267
High-k dielectrics for future generation memory devices (Invited Paper)
|Microelectronic Engineering|2009|252
Undoped and <i>in-situ</i> B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
|Applied Physics Letters|2011|189