Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions
Benjamin Vincent(IMEC), Matty Caymax(IMEC), J. Dekoster(IMEC), Shigeaki Zaima(Nagoya University), Jens Rip(IMEC), Chris Claypool, Thierry Conard(IMEC), Brice De Jaeger(IMEC), Maarten Vanbel(KU Leuven), Thierry Verbiest(Columbia University), Shotaro Takeuchi(Fukui Prefectural University), Bert Brijs(IMEC), Ventsislav K. Valev(University of Bath), Jérôme Mitard(IMEC), W. Vandervorst(IMEC), Bastien Douhard(IMEC), J. Delmotte(IMEC), Roger Loo(IMEC)
Cited by 31
Related Papers
Raman Techniques: Fundamentals and Frontiers
|Nanoscale Research Letters|2019|774
Surface-Enhanced Raman Spectroscopy Facilitates the Detection of Microplastics <1 μm in the Environment
|Environmental Science & Technology|2020|345
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
|Applied Physics Letters|2007|271
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
|Journal of The Electrochemical Society|2008|267
High-k dielectrics for future generation memory devices (Invited Paper)
|Microelectronic Engineering|2009|252