Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate
Kian-Hui Goh(National University of Singapore), Yee‐Chia Yeo(Agency for Science, Technology and Research), Eugene Y.-J. Kong, Ching-Kean Chia(Agency for Science, Technology and Research), Yuanbing Cheng(Agency for Science, Technology and Research), Kain Lu Low(University of Liverpool), Eng-Huat Toh(GlobalFoundries (Singapore))
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