Device Physics and Design of a L-Shaped Germanium Source Tunneling TransistorKain Lu Low, Yee‐Chia Yeo, Chunlei Zhan et al.|Japanese Journal of Applied Physics|2012Cited by 16
Device Physics and Design of a L-Shaped Germanium Source Tunneling TransistorKain Lu Low, Yee‐Chia Yeo, Eng-Huat Toh et al.|Japanese Journal of Applied Physics|2012Cited by 9
PBTI characteristics of N-channel tunneling field effect transistor with HfO<inf>2</inf> gate dielectric: New insights and physical modelGenquan Han, Yee‐Chia Yeo, Yue Yang et al.|Unknown|2012Cited by 8
Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrateKian-Hui Goh, Yee‐Chia Yeo, Yuanbing Cheng et al.|Journal of Applied Physics|2013Cited by 0
Tunnel Field-Effect Transistor with L-shaped Germanium Source: Device Physics and DesignKain Lu Low, Yee‐Chia Yeo, Chunlei Zhan et al.|Unknown|2011Cited by 0