Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

Yue Yang(National University of Singapore), Yee‐Chia Yeo(Agency for Science, Technology and Research), Lanxiang Wang(Chinese Academy of Sciences), Kain Lu Low(University of Liverpool), Chunlai Xue(Chinese Academy of Sciences), Buwen Cheng(Chinese Academy of Sciences), Genquan Han(Xuzhou University of Technology), Wei Wang(National University of Singapore), Guangze Zhang(Chinese Academy of Sciences), Shaojian Su(Chinese Academy of Sciences), Pengfei Guo(National University of Singapore), Xiao Gong(University of Michigan)
Unknown
December 1, 2012
10.1109/iedm.2012.6479053
Cited by 59

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