Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?
Nick S. Bennett(University of Surrey), P.J. McNally(Dublin City University), L. O’Reilly(Dublin City University), Andrew J. Smith(Intel (United States)), R. Gwilliam(University of Surrey), N. E. B. Cowern(University of Surrey), B.J. Sealy(University of Surrey), R.P. Webb(University of Surrey)
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
January 1, 2008
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