Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?Nick S. Bennett, P.J. McNally, L. O’Reilly et al.|Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena|2008Cited by 23
Highly conductive Sb-doped layers in strained SiNick S. Bennett, H. Kheyrandish, N. E. B. Cowern et al.|Applied Physics Letters|2006Cited by 19
Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained SiliconNick S. Bennett, B.J. Sealy, N. E. B. Cowern et al.|MRS Proceedings|2006Cited by 3