Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?Nick S. Bennett, P.J. McNally, Andrew J. Smith et al.|Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena|2008Cited by 23
Fluorine-vacancy complexes in ultrashallow B-implanted SiD. A. Abdulmalik, F. Cristiano, P. G. Coleman et al.|Applied Physics Letters|2006Cited by 21
Highly conductive Sb-doped layers in strained SiNick S. Bennett, H. Kheyrandish, B.J. Sealy et al.|Applied Physics Letters|2006Cited by 19
Differential Hall profiling of ultra-shallow junctions in Si and SOINick S. Bennett, B.J. Sealy, Andrew J. Smith et al.|Materials Science and Engineering B|2005Cited by 19
Enhanced n-type dopant solubility in tensile-strained SiNick S. Bennett, B.J. Sealy, Henry H. Radamson et al.|Thin Solid Films|2008Cited by 7