MRAM as Embedded Non-Volatile Memory Solution for 22FFL FinFET Technology
O. Golonzka(Intel (United States)), K. Fischer(Intel (United States)), K. O’Brien(European Southern Observatory), Barry M. Doyle(Intel (United States)), Justin Brockman(Intel (United States)), M. Seth(Intel (United States)), Blake C. Lin(Intel (United States)), Mesut Meterelliyoz(Intel (United States)), J.O Donnell(Intel (United States)), M. Bohr(Intel (United States)), J. P. Pellegren(Intel (United States)), Kaan Oguz(Intel (United States)), P. Heil(Intel (United States)), Benjamin Buford(Intel (United States)), Meenakshi Sekhar(Intel (United States)), Conor Puls(Intel (United States)), Refat Jahan(Intel (United States)), P. Nguyen(Intel (United States)), Dmitri E. Nikonov(Intel (United States)), Fatih Hamzaoglu(Intel (United States)), Mei-Chien Lu(Intel (United States)), Angeline Klemm Smith(Intel (United States)), Andrew J. Smith(Intel (United States)), P. Hentges(Intel (United States)), D.L. Kencke(Intel (United States)), T. Ghani(Intel (United States)), A. Selarka(Intel (United States)), David Ouellette(Intel (United States)), Pedro A. Quintero(Intel (United States)), Lili Wei(Intel (United States)), Z. Zhang(Intel (United States)), Tauhidur Rahman(Intel (United States)), Ümüt Arslan(Intel (United States)), Md Mainuddin(Intel (United States)), Nilanjan Das(Intel (United States)), Christopher W. Connor(Intel (United States)), Jang Hyeok Park(Intel (United States)), Juan G. Alzate(University of California, Los Angeles), C. Wiegand(Intel (United States)), A. Romang(Intel (United States))
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