Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer
Qi Xie(ASM International (Belgium)), Christophe Detavernier(Ghent University Hospital), Marc Schaekers(IMEC), Annelies Delabie(IMEC), Xin-Ping Qu(Fudan University), Matty Caymax(IMEC), Davy Deduytsche(Ghent University)
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