Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N

K. X. Chen(Rensselaer Polytechnic Institute), J. Smart(Crystal Research (United States)), W. Lee(Rensselaer Polytechnic Institute), X. Li(Crystal Research (United States)), J. K. Kim(Rensselaer Polytechnic Institute), James Grandusky(Crystal Research (United States)), Qi Dai(Microsoft Research (United Kingdom)), Mark C. Mendrick(Crystal Research (United States)), E. F. Schubert(Rensselaer Polytechnic Institute)
Applied Physics Letters
November 10, 2008
10.1063/1.3021076
Cited by 69

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