Low Power Consumption Complementary Inverters with n-MoS<sub>2</sub> and p-WSe<sub>2</sub> Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode CircuitsPyo Jin Jeon, Seongil Im, Jin Sung Kim et al.|ACS Applied Materials & Interfaces|2015Cited by 144
Metal Semiconductor Field-Effect Transistor with MoS<sub>2</sub>/Conducting NiO<sub><i>x</i></sub> van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching SpeedKwang H. Lee, Seongil Im, Sung‐Wook Min et al.|ACS Nano|2015Cited by 104
Enhanced device performances of WSe <sub>2</sub> –MoS <sub>2</sub> van der Waals junction p–n diode by fluoropolymer encapsulationPyo Jin Jeon, Seongil Im, Sung‐Wook Min et al.|Journal of Materials Chemistry C|2015Cited by 79
Trap density probing on top-gate MoS <sub>2</sub> nanosheet field-effect transistors by photo-excited charge collection spectroscopyKyunghee Choi, Seongil Im, Syed Raza Ali Raza et al.|Nanoscale|2015Cited by 78
Simultaneous Protection of Organic p- and n-Channels in Complementary Inverter from Aging and Bias-Stress by DNA-Base Guanine/Al<sub>2</sub>O<sub>3</sub> Double LayerJunyeong Lee, Seongil Im, Sung‐Wook Min et al.|ACS Applied Materials & Interfaces|2014Cited by 9