Metal Semiconductor Field-Effect Transistor with MoS<sub>2</sub>/Conducting NiO<sub><i>x</i></sub> van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed
Kwang H. Lee(Yonsei University), Seongil Im(Yonsei University), Kimoon Lee(Kunsan National University), Pyo Jin Jeon(Yonsei University), Jae Hoon Kim(Yonsei University), Jin Sung Kim(Yonsei University), Sung‐Wook Min(Yonsei University), Hyoung Joon Choi(Yonsei University), Seung Su Baik(Yonsei University), Kyujin Choi(Yonsei University)
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