Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) PolymerYoung Tack Lee, Seongil Im, Hyeokjae Kwon et al.|ACS Nano|2015Cited by 159
Black Phosphorus–Zinc Oxide Nanomaterial Heterojunction for p–n Diode and Junction Field-Effect TransistorPyo Jin Jeon, Seongil Im, Young Tack Lee et al.|Nano Letters|2016Cited by 157
Low Power Consumption Complementary Inverters with n-MoS<sub>2</sub> and p-WSe<sub>2</sub> Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode CircuitsPyo Jin Jeon, Seongil Im, Jin Sung Kim et al.|ACS Applied Materials & Interfaces|2015Cited by 144
Vertical and In-Plane Current Devices Using NbS<sub>2</sub>/n-MoS<sub>2</sub> van der Waals Schottky Junction and Graphene ContactHyung Gon Shin, Seongil Im, Hyong Seo Yoon et al.|Nano Letters|2018Cited by 106
Metal Semiconductor Field-Effect Transistor with MoS<sub>2</sub>/Conducting NiO<sub><i>x</i></sub> van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching SpeedKwang H. Lee, Seongil Im, Seung Su Baik et al.|ACS Nano|2015Cited by 104