Low Power Consumption Complementary Inverters with n-MoS<sub>2</sub> and p-WSe<sub>2</sub> Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode CircuitsPyo Jin Jeon, Seongil Im, Jin Sung Kim et al.|ACS Applied Materials & Interfaces|2015Cited by 144
Metal Semiconductor Field-Effect Transistor with MoS<sub>2</sub>/Conducting NiO<sub><i>x</i></sub> van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching SpeedKwang H. Lee, Seongil Im, Seung Su Baik et al.|ACS Nano|2015Cited by 104
Dual Gate Black Phosphorus Field Effect Transistors on Glass for NOR Logic and Organic Light Emitting Diode SwitchingJin Sung Kim, Seongil Im, Youngsuk Cho et al.|Nano Letters|2015Cited by 89
High‐Performance, Air‐Stable, Top‐Gate, p‐Channel WSe<sub>2</sub> Field‐Effect Transistor with Fluoropolymer Buffer LayerSeyed Hossein Hosseini Shokouh, Seongil Im, Pyo Jin Jeon et al.|Advanced Functional Materials|2015Cited by 88
Enhanced device performances of WSe <sub>2</sub> –MoS <sub>2</sub> van der Waals junction p–n diode by fluoropolymer encapsulationPyo Jin Jeon, Seongil Im, Sung‐Wook Min et al.|Journal of Materials Chemistry C|2015Cited by 79