Studies of photoconductivity and field effect transistor behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires in vacuum and airNorman A. Sanford, Aric W. Sanders, Benjamin Klein et al.|Journal of Applied Physics|2013Cited by 40
Measurement of the electrostatic edge effect in wurtzite GaN nanowiresAlex Henning, Y. Rosenwaks, Benjamin Klein et al.|Applied Physics Letters|2014Cited by 13
Schottky-Gated Field Effect Transistors Based on GaN NanowiresPaul T. Blanchard, Norman A. Sanford, Benjamin Klein et al.|Unknown|2008Cited by 0
Studies of photoconductivity and FET behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires examined in vacuum and air | NISTNorman A. Sanford, Aric W. Sanders, Lawrence H. Robins et al.|Journal of Applied Physics|2013Cited by 0
Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structuresN. A. Sanford, Albert Davydov, D. F. Feezell et al.|arXiv (Cornell University)|2021Cited by 0